 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA614 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.) *Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A *Collector Power Dissipation: PC= 25W@ TC= 25 APPLICATIONS *Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w PARAMETER scs .i w VALUE -80 -55 -5 -3 25 UNIT .cn mi e V V VEBO Emitter-Base Voltage V IC Collector Current-Continuous A PC Collector Power Dissipation W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA614 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -55 V V(BR)CBO Collector-Base Breakdown Voltage IC= -500A; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -500A; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.5 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain hFE Classifications R 40-80 O 70-140 w Y w. w .cn mi cse is VEB= -5; IC= 0 IC= -0.5A; VCE= -5V 40 VCB= -80V; IE= 0 -50 A -50 A 240 120-240 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SA614
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |